Samsung invests $7 billion to build 1xnm flash memory in China

Samsung Electronics disclosed recently that it will invest up to US$7 billion in mainland China in the next few years to build a number of new process plants, including the use of the most advanced 10nm-level NAND flash memory technology.

Samsung's first plant to be considered will be located in Xi'an, Shaanxi Province, with an estimated investment of US$2.3 billion. It will be completed and put into operation soon, and NAND flash memory with a 10nm class process can be manufactured to meet the ever-increasing market demand.

Seo Won-seok, an analyst at Korea Investment & Securities, points out: “A factory like this could create the largest scale in the entire industry. For NAND flash memory, China will become a key production site, with South Korea goes hand in hand."

As for the other $4.7 billion in investment, Samsung has not disclosed more detailed plans, but many of them will also be related to NAND flash memory.

Industry insiders believe that China’s huge population and numerous electronic foundries will drive it to become the world’s largest consumer of NAND flash memory in the next few years. It is necessary to build a corresponding flash memory plant here as soon as possible, and it is also reasonable to expand production capacity in the medium to long-term future. Among them.